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| CJD122 NPN CJD127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122, CJD127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching and amplifier applications. MARKING CODE: FULL PART NUMBER DPAK TRANSISTOR CASE MAXIMUM RATINGS: (TC=25C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Peak Collector Current ICM Base Current IB Power Dissipation PD Power Dissipation (TA=25C) PD Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance JC Thermal Resistance JA UNITS V V V A A mA W W C C/W C/W 100 100 5.0 8.0 16 120 20 1.75 -65 to +150 6.25 71.4 ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEO VCE=50V ICEV VCE=100V, VBE(off)=1.5V ICEV VCE=100V, VBE(off)=1.5V, TC=125oC ICBO VCB=100V IEBO VEB=5.0V BVCEO IC=30mA 100 VCE(SAT) IC=4.0A, IB=16mA VCE(SAT) IC=8.0A, IB=80mA VBE(SAT) IC=8.0A, IB=80mA VBE(ON) VCE=4.0V, IC=4.0A hFE VCE=4.0V, IC=4.0A 1000 hFE VCE=4.0V, IC=8.0A 100 fT VCE=4.0V, IC=3.0A, f=1.0MHz 4.0 Cob VCB=10V, IE=0, f=1.0MHz (CJD122) Cob VCB=10V, IE=0, f=1.0MHz (CJD127) hfe VCE=4.0V, IC=3.0A, f=1.0kHz MAX 10 10 500 10 2.0 2.0 4.0 4.5 2.8 12000 UNITS A A A A mA V V V V V 200 300 300 MHz pF pF R1 (26-September 2002) Central TM Semiconductor Corp. CJD122 NPN CJD127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DPAK TRANSISTOR CASE - MECHANICAL OUTLINE LEAD CODE: B) BASE C) COLLECTOR E) EMITTER C) COLLECTOR MARKING CODE: FULL PART NUMBER R1 (26-September 2002) |
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